Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

High-voltage power devices and transistors form the backbone of modern energy conversion systems, serving critical roles in renewable energy, automotive powertrains and industrial drives. These ...

Saelig Company, Inc. has announced availability of the CLIPPER CLP1500V15A1, an oscilloscope adapter that allows small voltages to be measured in the presence of very high voltages, such as those ...

The CPC5608 is a 5-channel, low power transistor array integrated circuit featuring extremely low static current draw from power supply in a simple 2-state logic control input. It has two state ...

Volume production has commenced for Efficient Power Conversion’s (EPC) EPC2366, the first of its seventh-generation (Gen 7) eGaN family of power transistors. Devices produced on the new process ...

A technical paper titled “Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives” was published by researchers at University of Padova. “We ...

Researchers from the Delft University of Technology (TU Delft) have investigated how power electronics may be embedded in solar cells and proposed several design options for PV devices integrating ...

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(Nanowerk Spotlight) In the field of computing, the electronic transistor has long been the dominant technology. Since its invention in 1947, this tiny device has become the foundation of modern ...

Semiconducting CNTs possess several advantages over traditional silicon, including higher carrier mobility and better electrostatic control at nanoscale dimensions. These properties make them ...